| PART |
Description |
Maker |
| NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| THN6701B |
SiGe NPN Transistor
|
AUK corp
|
| THN450Z |
SiGe NPN Transistor
|
AUK corp
|
| THN420Z |
SiGe NPN Transistor
|
AUK corp
|
| THN5601SF |
NPN SiGe RF POWER TRANSISTOR
|
Tachyonics CO,. LTD
|
| THN6501 |
NPN SiGe RF TRANSISTOR npn型硅锗射频晶体管
|
Tachyonics Co,. Ltd.
|
| NESG3031M14-T3-A NESG3031M14 NESG3031M14-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| BFP620FE6327 |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
|
INFINEON TECHNOLOGIES AG
|
| BFP750 |
High Linearity Low Noise SiGe:C NPN RF Transistor
|
Infineon Technologies AG
|
| NESG2021M05-T1-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR 邻舍npn型硅锗高频晶体管
|
Duracell
California Eastern Laboratories, Inc.
|
